au.\*:("KEFFOUS, A")
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Preparation and room temperature photoluminescence characterization of PbS/Si (100) thin filmsKACI, S; KEFFOUS, A; GUERBOUS, L et al.Thin solid films. 2011, Vol 520, Num 1, pp 79-82, issn 0040-6090, 4 p.Article
Si-rich a-Si1―xCx thin films by d.c. magnetron co-sputtering of silicon and silicon carbide: Structural and optical propertiesOUADFEL, M. A; KEFFOUS, A; MENARI, H et al.Applied surface science. 2013, Vol 265, pp 94-100, issn 0169-4332, 7 p.Article
Relationship between crystal morphology and photoluminescence in polynanocrystalline lead sulfide thin filmsKACI, S; KEFFOUS, A; TRARI, M et al.Journal of luminescence. 2010, Vol 130, Num 10, pp 1849-1856, issn 0022-2313, 8 p.Article
Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-fieldKEFFOUS, A; ZITOUNI, M; BELKACEM, Y et al.Applied surface science. 2002, Vol 199, Num 1-4, pp 22-30, issn 0169-4332, 9 p.Article
PEG300-assisted synthesis and characterization of PbS nanostructured thin filmsKACI, S; KEFFOUS, A; TRARI, M et al.Journal of alloys and compounds. 2010, Vol 496, Num 1-2, pp 628-632, issn 0925-8388, 5 p.Article
Structural and morphological study of ZnO thin films electrodeposited on n-type siliconAIT AHMED, N; FORTAS, G; HAMMACHE, H et al.Applied surface science. 2010, Vol 256, Num 24, pp 7442-7445, issn 0169-4332, 4 p.Article
Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etchingBOUKEZZATA, A; KEFFOUS, A; MENARI, H et al.Applied surface science. 2010, Vol 256, Num 18, pp 5592-5595, issn 0169-4332, 4 p.Conference Paper
Chemical etching of hot-pressed p-type polycrystalline SiC surfaces by HF/K2S2O8 solutionsBOURENANE, K; KEFFOUS, A; NEZZAL, G et al.Surface and interface analysis. 2007, Vol 39, Num 5, pp 392-396, issn 0142-2421, 5 p.Article
Comparative study of porous amorphous a-Si1-xCx films and a-Si1-xCx membranes on structural and luminescence propertiesBOUKEZZATA, A; NEZZAL, G; GUERBOUS, L et al.Journal of luminescence. 2011, Vol 131, Num 6, pp 1184-1188, issn 0022-2313, 5 p.Article
Investigation of porous silicon carbide as a new material for environmental and optoelectronic applicationsKEFFOUS, A; GABOUZE, N; CHERIET, A et al.Applied surface science. 2010, Vol 256, Num 18, pp 5629-5639, issn 0169-4332, 11 p.Conference Paper
Effect of thickness and porous structure of SiC layers on the spectral response of the Pd/SiC-pSi Schottky photodiodesBOUKEZZATA, A; NEZZAL, G; KEFFOUS, A et al.Optics communications. 2008, Vol 281, Num 8, pp 2126-2131, issn 0030-4018, 6 p.Article
Lithium-drifted, silicon radiation detectors for harsh radiation environmentsGRANT, J; BUTTAR, C; BROZEL, M et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S14-S18, SUP1Conference Paper
Effect of series resistance on the performance of high resistivity silicon Schottky diodeKEFFOUS, A; SIAD, M; MAMMA, S et al.Applied surface science. 2003, Vol 218, Num 1-4, pp 336-342, issn 0169-4332, 7 p.Article
40 Å Platinum―porous SiC gas sensor: Investigation sensing properties of H2 gasKEFFOUS, A; CHERIET, A; BEROUAKEN, M et al.Physica. B, Condensed matter. 2013, Vol 408, pp 193-197, issn 0921-4526, 5 p.Article
Investigation of nc-PbS/a-Si1―xCx:H/pSi(100) heterostructures for LED applicationsKACI, S; KEFFOUS, A; HAKOUM, S et al.Optical materials (Amsterdam). 2012, Vol 35, Num 1, pp 1-4, issn 0925-3467, 4 p.Article
Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glassesKEZZOULA, F; HAMMOUDA, A; KECHOUANE, M et al.Applied surface science. 2011, Vol 257, Num 23, pp 9689-9693, issn 0169-4332, 5 p.Article
Early stages of nanosecond pulsed-laser growth of silicon pillars in vacuumBELAROUSSI, Y; KERDJA, T; YADDADENE, C et al.Journal of crystal growth. 2011, Vol 337, Num 1, pp 20-23, issn 0022-0248, 4 p.Article
Influence of polyethylene glycol-300 addition on nanostructured lead sulfide thin films propertiesKACI, S; KEFFOUS, A; TRARI, M et al.Optics communications. 2010, Vol 283, Num 17, pp 3355-3360, issn 0030-4018, 6 p.Article
Morphological and photoluminescence study of porous thin SiC layer grown onto siliconBOURENANE, K; KEFFOUS, A; KECHOUACHE, M et al.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 763-768, issn 0142-2421, 6 p.Conference Paper
Effect of anodization time on photoluminescence of porous thin SiC layer grown onto siliconKEFFOUS, A; BOURENANE, K; KECHOUANE, M et al.Journal of luminescence. 2007, Vol 126, Num 2, pp 561-565, issn 0022-2313, 5 p.Article
